- 您现在的位置：买卖IC网 > PDF目录48159 > 2SC5569 (UNISONIC TECHNOLOGIES CO LTD) 7 A, 50 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5569 |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 170K |
| 代理商： | 2SC5569 |
UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-031,A
DC/DC CONVERTER
APPLICATIONS
FEATURES
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching.
*High allowable power dissipation.
*Complementary to 2SA2016.
APPLICATIONS
*Relay drivers, lamp drivers, motor drivers, strobes
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
7
A
Collector Current (Pulse)
Icp
10
A
Base Current
IB
1.2
A
Collector Dissipation
Tc=25
°C
Pc
1.3*
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 ~ +150
°C
* Mounted on ceramic board (250mm
2×0.8mm)
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector to Base Breakdown Voltage
V(BR)CBO Ic=10μA,IE=0
80
V
Collector to Emitter Breakdown Voltage
V(BR)CEO Ic=1mA,RBE=∞
50
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=10μA,IE=0
6
V
Collector Cut-Off Current
ICBO
VCB=40V,IE=0
0.1
μ
A
Emitter Cut-Off Current
IEBO
VEB=4V,Ic=0
0.1
μ
A
DC Current Gain
hFE
VCE=2V,Ic=500mA
200
560
Ic=3.5A,IB=175mA
160
240
mV
Collector to Emitter Saturation Voltage
VCE(sat)
Ic=2A,IB=40mA
110
170
mV
Base to Emitter Saturation Voltage
VBE(sat) Ic=2A,IB=40mA
0.83
1.2
V
Gain Bandwidth Product
fT
VCE=10V,Ic=500mA
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
28
pF
Turn-On Time
ton
See specified Test Circuit
30
ns
Storage Time
tstg
See specified Test Circuit
420
ns
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5683 | 25 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5784 | 1500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5791 | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5791 | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5862 | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5569-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 7A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5570(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5584 | 制造商:Distributed By MCM 功能描述:1500V 20A 150W Bce Matsushita Transistor Top-3L |
| 2SC5585TL | 功能描述:两极晶体管 - BJT NPN 12V 0.5A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。