参数资料
型号: 2SC5593
元件分类: 小信号晶体管
英文描述: RF SMALL SIGNAL TRANSISTOR
封装: CMPAK-4
文件页数: 6/8页
文件大小: 47K
代理商: 2SC5593
2SC5593
6
S-parameter ( V
CE = 2 V, IC = 10 mA, Zo = 50 )
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.804
–8.2
22.02
172.5
0.00305
94.6
0.993
–3.4
200
0.795
–17.8
21.55
165.0
0.0067
86.8
0.986
–8.1
300
0.776
–27.4
20.88
157.5
0.0107
85.4
0.972
–12.7
400
0.746
–35.8
20.05
150.2
0.0146
82.5
0.947
–17.2
500
0.714
–44.5
18.93
143.7
0.0182
78.4
0.917
–21.2
600
0.673
–53.2
17.84
137.9
0.0215
74.8
0.881
–25.1
700
0.632
–59.9
16.60
132.5
0.0249
71.8
0.842
–28.3
800
0.595
–67.1
15.69
127.9
0.0274
67.9
0.808
–31.2
900
0.557
–74.6
14.64
123.5
0.0296
65.1
0.763
–33.7
1000
0.519
–79.1
13.68
119.5
0.0319
63.6
0.729
–35.6
1100
0.488
–86.0
12.88
116.0
0.0337
61.6
0.696
–37.2
1200
0.454
–91.1
12.03
112.8
0.0350
60.4
0.666
–38.6
1300
0.430
–95.9
11.26
110.6
0.0366
58.8
0.644
–39.5
1400
0.403
–101.8
10.69
107.8
0.0382
57.4
0.619
–40.6
1500
0.377
–106.3
10.16
105.4
0.0401
56.6
0.598
–41.2
1600
0.364
–111.0
9.66
103.6
0.0410
56.3
0.581
–42.0
1700
0.346
–116.6
9.19
101.4
0.0422
55.6
0.564
–42.6
1800
0.327
–120.0
8.79
99.3
0.0435
55.2
0.550
–43.2
1900
0.313
–124.9
8.40
97.5
0.0447
55.2
0.537
–43.9
2000
0.296
–130.8
7.99
95.5
0.0457
54.8
0.525
–44.0
相关PDF资料
PDF描述
2SC5599-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5599-T1FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5606-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5606-T1FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5606-FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5606-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):3.3V 频率 - 跃迁:21GHz 噪声系数(dB,不同 f 时的典型值):1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):60 @ 5mA,2V 电流 - 集电极(Ic)(最大值):35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:- 标准包装:1
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪切带(CT) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):3.3V 频率 - 跃迁:21GHz 噪声系数(dB,不同 f 时的典型值):1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):60 @ 5mA,2V 电流 - 集电极(Ic)(最大值):35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:SOT-523 标准包装:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述: