参数资料
型号: 2SC5606-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3
文件页数: 5/9页
文件大小: 194K
代理商: 2SC5606-A
Data Sheet PU10781EJ01V0DS
3
2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°C)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
200
150
115
100
50
0
25
0
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
1.0
0.1
1.0
0.1
10.0
100.0
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
650 A
μ
IB 100 A step
μ
IB = 50 A
μ
250 A
μ
450 A
μ
40
30
20
10
0
12
3
04
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 2 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
10
0.1
10.0
1.0
100.0
VCE = 2 V
Remark The graphs indicate nominal characteristics.
<R>
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相关代理商/技术参数
参数描述
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪切带(CT) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):3.3V 频率 - 跃迁:21GHz 噪声系数(dB,不同 f 时的典型值):1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):60 @ 5mA,2V 电流 - 集电极(Ic)(最大值):35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:SOT-523 标准包装:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述:
2SC5612 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR