参数资料
型号: 2SC5606-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3
文件页数: 7/9页
文件大小: 194K
代理商: 2SC5606-A
2SJ160, 2SJ161, 2SJ162
5
–10
–0.5
–10
Drain Current ID (A)
Drain
to
Source
Saturation
Voltage
V
DS
(sat)
(V)
–5
–0.5
–0.2
–1.0
–2
–0.1
–1.0
–2
Drain to Source Saturation Voltage
vs. Drain Current
VGD = 0
–0.2
–0.1
–5
75
25
T C
= –25°C
–10
–4
–10
Gate to Source Voltage VGS (V)
Drain
to
Source
Voltage
V
DS
(V)
–8
–4
–2
–6
–8
0
–6
Drain to Source Voltage vs.
Gate to Source Voltage
ID = –1 A
–2
–5
1,000
410
Gate to Source Voltage VGS (V)
Input
Capacitance
Ciss
(pF)
500
26
8
100
Input Capacitance vs.
Gate to Source Voltage
VDS = –10 V
f = 1 MHz
200
0
3.0
30 k
Frequency f (Hz)
Forward
Transfer
Admittance
yfs
(S)
1.0
10 k
0.3
Forward Transfer Admittance
vs. Frequency
0.1
0.03
0.01
0.003
100 k 300 k
1 M
3 M
10 M
TC = 25°C
VDS = –10 V
ID = –2 A
相关PDF资料
PDF描述
2SC5616-T3FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5616-EB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5617-EB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5617 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5617-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪切带(CT) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):3.3V 频率 - 跃迁:21GHz 噪声系数(dB,不同 f 时的典型值):1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):60 @ 5mA,2V 电流 - 集电极(Ic)(最大值):35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:SOT-523 标准包装:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述:
2SC5612 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR