- 您现在的位置：买卖IC网 > PDF目录55791 > 2SC5776 8 A, 800 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5776 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PMLH, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 31K |
| 代理商： | 2SC5776 |
2SC5776
No.6990-1/4
Features
High speed.
High breakdown voltage (VCBO=1600V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1600
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
8A
Collector Current (Pulse)
ICP
16
A
Collector Dissipation
PC
3.0
W
Tc=25
°C65
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
ICES
VCE=1600V, RBE=0
1.0
mA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
40
200
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6990A
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
2SC5776
Package Dimensions
unit : mm
2174A
[2SC5776]
52003 TS IM TA-100443 / 62001 TS IM TA-3322
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
0.7
0.9
3.5
8.0
5.6
3.1
12
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5827 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5894WJ-TL-E | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC6042 | 1000 mA, 375 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC6058LS-M | POWER TRANSISTOR, TO-220AB |
| 2SC6064 | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5778 | 制造商:Sanyo Fisher 功能描述:800V 15A 85W Bce Sanyo Transistor TO-3Pmlh |
| 2SC578 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR60V .5A .6W |
| 2SC5784(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A TSM |
| 2SC5785(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 10V 2A hfe1000 25ns PW-M |
| 2SC57880PA | 功能描述:TRANS NPN PWR AMP 60VCEO 3A MT-4 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
发布紧急采购，3分钟左右您将得到回复。