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参数资料
| 型号： | 2SC5810 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-5K1A, SC-62, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 140K |
| 代理商： | 2SC5810 |
2SC5810
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
High-speed switching: tf = 85 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
VCEX
80
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
1.0
Collector current
Pulse
ICP
2.0
A
Base current
IB
0.1
A
DC
2.0
Collector power
dissipation
t = 10 s
PC (Note 1)
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5810(TE12L,F) | 功能描述:MOSFET Power Trans 100V 0.17V Vce 85ns RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SC581300L | 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC5819(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62 |
| 2SC582 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5823-TL-E | 制造商:SANYO 功能描述:NPN 400V 1.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 400V 1.5A TO-251 制造商:Sanyo 功能描述:0 |
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