参数资料
型号: 2SC5812WG-TR-E
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: MODIFIED SC-89, MFPAK-3
文件页数: 1/4页
文件大小: 123K
代理商: 2SC5812WG-TR-E
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
PDF描述
2SC5832 2000 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5843-FB L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5843-T3FB-A L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5843-FB-A L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5849WY-TR-E UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC581300L 功能描述:TRANS NPN 80VCEO 1.5A MINI-3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SC5819(TE12L,F) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 20V 1.5A SC-62
2SC582 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC5823-TL-E 制造商:SANYO 功能描述:NPN 400V 1.5A 20 to 50 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 400V 1.5A TO-251 制造商:Sanyo 功能描述:0
2SC5824T100Q 功能描述:两极晶体管 - BJT NPN 60V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2