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参数资料
| 型号： | 2SC5824T100Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 934K |
| 代理商： | 2SC5824T100Q |
2/3
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c
2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.C
Data Sheet
2SC5824
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BVEBO
ICBO
IEBO
VCE(sat)
fT
hFE
Cob
ton
Min.
6
120
200
20
50
1.0
200
500
390
IE
=100μA
VCE
=2V, IC=100mA
VCB
=40V
VEB
=4V
IC
=2A, IB=200mA
IC
=3A,
IB1
=300mA
IB2
= 300mA
VCC 25V
VCE
=10V, IE= 100mA, f=10MHz
VCB
=10V, IE=0mA, f=1MHz
V
μA
MHz
mV
pF
ns
tstg
150
ns
tf
30
ns
Typ.
Max.
Unit
Conditions
BVCEO
60
V
IC
=1mA
Collector
emitter breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector
emitter staturation voltage
BVCBO
60
IC
=100μA
V
Collector
base breakdown voltage
Emitter
base breakdown voltage
2
1
1 Non repetitive pulse
2 See switching charactaristics measurement circuits
hFE RANK
QR
120-270
180-390
Electrical characteristic curves
VCE
=2V
0.01
0.1
10
1
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
0
0.5
1
1.5
2
Fig.1 Ground emitter propagation
characteristics
Ta
=100°C
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
VCE
=5V
VCE
=3V
VCE
=2V
Fig.2 DC current gain vs. collector
current
Ta
=25°C
Fig.3 DC current gain vs. collector
current
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
0.001
0.01
0.1
10
1
10
100
1000
Ta
=125°C
Ta
=100°C
Ta
=25°C
Ta
= 40°C
VCE
=2V
0.001
0.1
0.01
10
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(
sat)(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
IC/IB
=10/1
IC/IB
=20/1
Ta
=25°C
0.001
0.01
0.1
0.01
0.1
1
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat
)(V)
COLLECTOR CURRENT : IC
(A)
10
1
Fig.5 Collector-emitter saturation voltage
vs. Collector Current
IC/IB
=10/1
Ta
=125°C
Ta
=100°C
Ta
=25°C
Ta
= 40°C
COLLECTOR CURRENT : IC (A)
BASE
EMITTER
SATURATION
VOLTAGE
:
V
BE
(sat
)(V)
Fig.6 Base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
10
1
10
1
0.1
Ta
=100°C
Ta
=125°C
IC/IB
=10/1
Ta
=25°C
Ta
= 40°C
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