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参数资料
| 型号： | 2SC5886 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7J1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 141K |
| 代理商： | 2SC5886 |
2SC5886
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.5 A
400
1000
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
200
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 32 mA
0.22
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 32 mA
1.10
V
Rise time
tr
63
Storage time
tstg
560
Switching time
Fall time
tf
See Figure 1.
VCC 24 V, RL = 15 Ω
IB1 = 32 mA, IB2 = 53 mA
55
ns
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
C5886
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
IB2
IB1
20
μs
Output
Input
IB2
IB1
R
L
VCC
Duty cycle
< 1%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5886A(T6L1,NQ) | 功能描述:两极晶体管 - BJT NPN VCE 0.22V 95ns 400 to 1000 hFE 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5888 | 功能描述:两极晶体管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5888-1EX | 制造商:ON Semiconductor 功能描述:BIP NPN 10A 50V |
| 2SC5900-MG32 | 制造商:ON Semiconductor 功能描述: |
| 2SC5902 | 制造商:Panasonic Industrial Company 功能描述:TOP-3E-A1 1700V 9A 40W BCE Panasonic Transistor |
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