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参数资料
| 型号： | 2SC5906 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TSM, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 421K |
| 代理商： | 2SC5906 |
New Product Guide
Low-Voltage Bipolar
Transistors with Ultra-High
Speed Switching
2002-9
The newly developed high-density pattern (Toshiba
comparison:
×7.5) allows the low-voltage bipolar transistors to
realize low-saturation voltage and high-speed switching. The
transistors are suitable for use as main switches in DC/DC
converters for portable devices and improve the efficiencies of
the devices. The transistors are housed in a compact
surface-mount packages, yielding a smaller mounting area.
● Low collector-emitter saturation voltage VCE (sat)
(Example)
2SC5906: VCE (sat) = 0.20 V max. (Test condition: IC = 1.6 A, IB = 53 mA, Ta = 25℃)
● High current gain
(Example) 2SC5906: hFE = 200 to 500 (Test condition: VCE = 2 V, IC = 0.5 A, Ta = 25℃)
● Compact surface-mount package
The world’s slimmest TSM and VS-6: 0.85 mm (max)
High power dissipation
(Example) 2SC5906: PC = 1.25 W
When mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
● Transistors
Rating
Product
No.
VCBO (V)
VCEO (V)
IC (A)
PC (W)
Package
Sample
Mass
Production
S3F97*
40
30
3
0.625
#
TSM
02/4Q
03/1Q
S3F98*
120
50
5
(20)
PW-MOLD
02/4Q
03/1Q
● Multi-Chip Device (transistor + SBD)
Product
No.
Rating
PC (W)
Package
Sample
Mass
Production
VCBO (V) VCEO (V)
IC (A)
Transistor
–15
–1.5
VRRM (V)
IO (A)
IFSM (A)
TPC6D02
SBD
30
0.7
7
0.6
#
VS-6
02/4Q
03/1Q
*: Prototype no.
#: When mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
(Unit: mm)
TSM
VS-6
PW-MOLD
Appearance
●DC/DC Converter
●LCD backlight inverter
●Portable devices
Cellular phones, PDAs, DSCs, video
cameras, notebook PCs, headphone
stereos, etc.
Package
Dimensions
Input
Output
TPC6D02
Step-down DC/DC Converter
● TPC6D02 Circuit Configuration
and Application Circuit Example
1
2
3
6
5
4
Appearance
Features
Overview
Package
Recommended Applications
2.
8
2.9
2.
8
2.9
9.
5
6.5
1
2.0
m
in
6.5
7.0
Future Product Lineup
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5915-DL-E | 制造商:SANYO 功能描述:NPN 50V 10A 200 to 560 SMP-FD Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 50V 10A SOT404 制造商:Sanyo 功能描述:0 |
| 2SC5916TLQ | 功能描述:两极晶体管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5916TLR | 功能描述:两极晶体管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5917TLR | 功能描述:两极晶体管 - BJT HIGH VOLT 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5918T100Q | 功能描述:两极晶体管 - BJT HIGH VOLT 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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