参数资料
型号: 2SC5915(SMP-FD)
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 功率晶体管
英文描述: 10 A, 50 V, NPN, Si, POWER TRANSISTOR
封装: SMP-FD, 3 PIN
文件页数: 1/4页
文件大小: 87K
代理商: 2SC5915(SMP-FD)
2SC5915
No.7408-1/4
Applications
Relay drivers, lamp drivers, motor drivers, inverters.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Surface mount type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
120
V
Collector-to-Emitter Voltage
VCES
120
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
10
A
Collector Current (Pulse)
ICP
15
A
Base Current
IB
2A
Collector Dissipation
PC
1.65
W
Tc=25°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Ordering number : EN7408A
22410FA TK IM / 13003 TS IM TA-100348
SANYO Semiconductors
DATA SHEET
2SC5915
NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
www.semiconductor-sanyo.com/network
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
相关PDF资料
PDF描述
2SC5915(SMP) 10 A, 50 V, NPN, Si, POWER TRANSISTOR
2SC5916TLR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5934 5 A, 50 V, NPN AND PNP, Si, POWER TRANSISTOR, TO-220AB
2SC5945TR-E S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5949-O 15 A, 200 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SC5916TLQ 功能描述:两极晶体管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5916TLR 功能描述:两极晶体管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5917TLR 功能描述:两极晶体管 - BJT HIGH VOLT 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5918T100Q 功能描述:两极晶体管 - BJT HIGH VOLT 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5918T100R 功能描述:两极晶体管 - BJT HIGH VOLT 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2