- 您现在的位置：买卖IC网 > PDF目录33419 > 2SC5950 (PANASONIC CORP) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5950 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-G1, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 344K |
| 代理商： | 2SC5950 |
Transistors
Publication date: May 2005
SJC00333AED
1
2SC5950
Silicon NPN epitaxial planar type
For general amplication
Complementary to 2SA2122
Features
High forward current transfer ratio h
FE
High forward current transfer ratio h
Smini typ package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings
Ta = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
TT
150
°
C
Storage temperature
Tstg
TT
55 to +150
°
C
Electrical Characteristics
Ta = 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
EE
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10
EE
A, IC = 0
7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
EE
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, I
CE
B = 0
100
A
Forward current transfer ratio
hFE
hh
VCE = 10 V, I
CE
C = 2 mA
160
460
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
ff
VCB = 10 V, IE =
EE
2 mA, f = 200 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 10 V, IE = 0, f = 1 MHz
EE
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
SMini3-G1 Package
2.1
±0.
1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.2
5
±0.10
(0.425
)
1
3
2
(0.65) (0.65)
0.
2
±0.
1
0.
9
±0.
1
0to
0.
1
0.
9+0.2 –
0.
1
0.15+0.10
–0.05
5°
10°
Marking Symbol: 7M
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5957-N | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC5979 | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5979 | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5999 | 25 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SC5999 | 25 A, 50 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC59540Q | 功能描述:TRANS NPN 60VCEO 3A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC5964-S-TD-E | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5964-S-TD-H | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5964-TD-E | 功能描述:两极晶体管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5964-TD-H | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。