参数资料
型号: 2SC5975
元件分类: 小信号晶体管
英文描述: HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: MFPAK-4
文件页数: 12/20页
文件大小: 380K
代理商: 2SC5975
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相关代理商/技术参数
参数描述
2SC5976(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 30V 3A hfe250-400 25ns
2SC5980-TL-E 制造商:SANYO 功能描述:NPN 50V 0.5A 250 to 400 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 50V 8A TO-251
2SC5984TLQ 功能描述:两极晶体管 - BJT HIGH VOLT 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5990-TD-E 制造商:SANYO 功能描述:mom 50V 4A 250 to 400 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 50V 4A SOT89
2SC59930P 功能描述:TRANS NPN 180VCEO 1.5A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR