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2SC6015
No.8558-1/4
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
15
V
Collector-to-Emitter Voltage
VCEO
15
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
9A
Collector Current (Pulse)
ICP
12
A
Base Current
IB
1.2
A
Collector Dissipation
PC
Mounted on a ceramic board (250mm2!0.8mm)
1.3
W
Tc=25
°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=12V, IE=0A
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
A
DC Current Gain
hFE
VCE=2V, IC=500mA
250
400
Marking : QC
Continued on next page.
Ordering number : EN8558
D2005EA MS IM TB-00001976
2SC6015
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.