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参数资料
| 型号： | 2SC6071-TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 32K |
| 代理商： | 2SC6071-TL |
2SC6071
No. A0271-1/4
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
120
V
Collector-to-Emitter Voltage
VCES
120
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
8V
Collector Current
IC
10
A
Collector Current (Pulse)
ICP
PW
≤100s13
A
Base Current
IB
2A
Collector Dissipation
PC
0.95
W
Tc=25
°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
10
A
DC Current Gain
hFE
VCE=2V, IC=1A
200
700
Gain-Bandwidth Product
fT
VCE=5V, IC=1A
200
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=5A, IB=250mA
180
360
mV
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=5A, IB=250mA
0.93
1.4
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0271
22406EA MS IM TB-00002046
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6071 NPN Epitaxial Planar SiliconTransistor
High-Current Switching Applications
相关PDF资料 |
PDF描述 |
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| 2SC6075 | 2.5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SC6080 | 13 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6092LS | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC6092LS | 8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6072(Q) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 180V 2A TO220SIS |
| 2SC6075 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type |
| 2SC6076 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) |
| 2SC6076(TE16L1,NQ) | 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 80V 3A hfe180-450 0.4us |
| 2SC6076(TE16L1,NV) | 功能描述:TRANS NPN 80V 3A PW MOLD 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 100mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:180 @ 500mA，2V 功率 - 最大值:10W 频率 - 跃迁:150MHz 安装类型:表面贴装 封装/外壳:TO-252-3，DPak（2 引线+接片），SC-63 供应商器件封装:PW-MOLD 标准包装:1 |
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