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| 型号： | 2SC6023 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MCP4, 4 PIN |
| 文件页数： | 1/15页 |
| 文件大小： | 58K |
| 代理商： | 2SC6023 |
2SC6023
No.8143-1/15
Features
Low-noise use
: NF=1.2dB typ (f=2GHz).
High cut-off frequency : fT=14.5GHz typ (VCE=1V).
:fT=22GHz typ (VCE=3V).
Low operating voltage.
High gain
:
S21e2=14dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
35
mA
Collector Dissipation
PC
120
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
1
A
DC Current Gain
hFE
VCE=3V, IC=15mA
80
160
Gain-Bandwidth Product
fT1VCE=1V, IC=5mA
14.5
GHz
fT2VCE=3V, IC=15mA
18
22
GHz
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.18
pF
Forward Transfer Gain
S21e21VCE=1V, IC=5mA, f=2GHz
9.5
11
dB
S21e22VCE=3V, IC=15mA, f=2GHz
14
dB
Noise Figure
NF
VCE=1V, IC=5mA, f=2GHz
1.2
dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8143
31005AB TS IM TB-00000431
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6023
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC6023-TR-E | 功能描述:TRANS NPN 3.5V 35MA MCP4 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| 2SC6024 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6024-TL-E | 功能描述:TRANS NPN 3.5V 35MA 3SSFP RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| 2SC6025 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6026 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
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