参数资料
型号: 2SC6067
元件分类: 小信号晶体管
英文描述: 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: 2-4E1A, 3 PIN
文件页数: 1/2页
文件大小: 164K
代理商: 2SC6067
2SC6067
2009-05-14
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC6067
Medium Power Amplifier Applications
Strobe Flash Applications
·
Low Saturation Voltage:
VCE (sat) = 0.3 V (max)
(@ IC=3A / IB=60mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
15
V
Collector-Emitter voltage
VCEO
10
V
Emitter-Base voltage
VEBO
6
V
DC
IC
5
Collector current
Pulsed
ICP
9
A
Collector power dissipation
PC (Note1)
550
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: When a device is mounted on a glass epoxy board
(35 mm
× 30 mm × 1mm)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 15 V, IE = 0
0.1
μA
Collector cut-off current
ICEO
VCE = 10 V, IB = 0
1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-Emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
10
V
hFE (1)
VCE = 1.5 V, IC = 0.5 A (Note 2)
450
700
hFE (2)
VCE = 1.5 V, IC = 2 A (Note 2)
310
DC current gain
hFE (3)
VCE = 1.5 V, IC = 5 A (Note 2)
160
Collector-Emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 60 mA (Note 2)
0.3
V
Collector-Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
28
pF
Note 2: Pulse test
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
1. Emitter
2. Collector
3. Base
Mini
相关PDF资料
PDF描述
2SC6079 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC6117 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC6118LS 8 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6140 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC6145AO 15 A, 260 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SC607 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNP/NPN SILICON EPITAXIAL TRANSISTOR
2SC6071 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
2SC6072(Q) 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 180V 2A TO220SIS
2SC6075 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type
2SC6076 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process)