参数资料
型号: 2SC6076
元件分类: 功率晶体管
英文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-7J1A, 3 PIN
文件页数: 3/5页
文件大小: 199K
代理商: 2SC6076
2N3904
Rev.1.00, Jul.22.2004, page 3 of 5
Main Characteristics
Base to Emitter & Collector to Emitter
Saturation Voltage vs. Collector Current
100
0.1
Collector Current IC (mA)
110
0.2
0.4
0
Base
to
Emitter
&
Collector
to
Emitter
Saturation
Voltage
V
BE(sat)
,V
CE(sat)
(V)
0.1
0.3
0.5
0.6
0.8
0.7
0.9
1.0
1.1
1.2
0
50
100
150
200
Total
Power
Dissipation
P
C(mW)
Total Power Dissipation Curve
Ambient Temperature Ta (°C)
200
400
600
100
300
500
700
800
100
150
350
0
0.01
1
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
0.1
10
50
200
250
-25°C
300
100
25°C
75°C
0
510
15
35
Collector
Current
I
C(mA)
Typical Output Characteristics (2)
Collector to Emitter Voltage VCE (V)
25
20
30
20
15
5
40
10
0.9 mA
1.0 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
IB=0.1 mA
0
0.5
1.0
1.5
2.0
Collector
Current
I
C(mA)
Typical Output Characteristics (1)
Collector to Emitter Voltage VCE (V)
30
20
10
50
80
70
60
40
100
90
0
0.7 mA
0.8 mA
0.9 mA
1.0 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
IB=0.1 mA
1
0.4
1
0.01
0.1
0.7
0.6
0.5
Base to Emitter Voltage VBE (V)
Collector
Current
I
C(mA)
0.2 0.3
0.9
0.8
0.1
10
100
25°C -25°C
75°C
Typical Transfer Characteristics
-25°C
25°C
75°C
-25°C
25°C
75°C
VBE(sat)
VCE(sat)
IC= 10IB
相关PDF资料
PDF描述
2SC6077 3 A, 80 V, NPN, Si, POWER TRANSISTOR
2SC6084 5 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC6091 8 A, 700 V, NPN, Si, POWER TRANSISTOR
2SC6095 2500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC6095 2500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
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