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参数资料
| 型号： | 2SD0814A |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | For High Breakdown Voltage Low-Frequency And Low-Noise |
| 中文描述： | 50 mA, 185 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 70K |
| 代理商： | 2SD0814A |
Transistors
2SD0814A
(2SD814A)
Silicon NPN epitaxial planar type
1
Publication date: January 2003
SJC00196CED
For high breakdown voltage low-frequency and low-noise
amplification
■
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
185
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
185
V
Emitter-base voltage (Collector open)
5
V
Collector current
I
C
50
mA
Peak collector current
I
CP
P
C
T
j
100
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
μ
A, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
100 V, I
E
=
0
V
CE
= 5 V, I
C
= 10 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
185
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE
1
μ
A
Forward current transfer ratio
*
90
330
Collector-emitter saturation voltage
V
CE(sat)
1
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
2.3
pF
Noise voltage
NV
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
R
g
= 100 k
, Function = FLAT
150
mV
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank
Q
R
S
h
FE
90 to 155
130 to 220
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Marking Symbol L
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PDF描述 |
|---|---|
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| 2SD814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
| 2SD814A | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD0814A(2SD814A) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号トランジスタ － 汎用低周波増幅 |
| 2SD0814AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 |
| 2SD0814AR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 |
| 2SD0814ARL | 功能描述:TRANS NPN 185VCEO 50MA MINI-3P RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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