参数资料
型号: 2SD1224
元件分类: 小信号晶体管
英文描述: 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7B1A, 3 PIN
文件页数: 1/5页
文件大小: 164K
代理商: 2SD1224
2SD1224
2005-02-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
10
V
Collector current
IC
1.5
A
Base current
IB
0.15
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
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