参数资料
型号: 2SD1224
元件分类: 小信号晶体管
英文描述: 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7B1A, 3 PIN
文件页数: 3/5页
文件大小: 164K
代理商: 2SD1224
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1743 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High hFE and low VCE(sat):
hFE
≥ 100 (VCE = 2 V, IC = 2 A)
V CE(sat)
≤ 0.3 V (IC = 6 A, IB = 0.3 A)
Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
10
A
Collector current (pulse)
IC(pulse)*
20
A
Base current (DC)
IB(DC)
5.0
A
Total power dissipation
PT (Tc = 25
°C)
30
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
*PW
≤ 300
s, duty cycle ≤ 10%
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相关代理商/技术参数
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