- 您现在的位置：买卖IC网 > PDF目录49972 > 2SD1224 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD1224 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 164K |
| 代理商： | 2SD1224 |
Data Sheet D16126EJ1V0DS
2
2SA1743
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
6.0 A, IB = 0.6 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC =
6.0 A, IB1 = IB2 = 0.6 A,
VBE(OFF) = 1.5 V, L = 180
H, clamped
60
V
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
10
A
Collector cutoff current
ICER
VCE =
60 V, RBE = 50 , Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
60 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
60 V, VBE(OFF) = 1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0
10
A
DC current gain
hFE1*
VCE =
2.0 V, IC = 1.0 A
100
DC current gain
hFE2*
VCE =
2.0 V, IC = 2.0 A
100
400
DC current gain
hFE3*
VCE =
2.0 V, IC = 6.0 A
60
Collector saturation voltage
VCE(sat)1*
IC =
6.0 A, IB = 0.3 A
0.3
V
Collector saturation voltage
VCE(sat)2*
IC =
8.0 A, IB = 0.4 A
0.5
V
Base saturation voltage
VBE(sat)1*
IC =
6.0 A, IB = 0.3 A
1.2
V
Base saturation voltage
VBE(sat)2*
IC =
8.0 A, IB = 0.4 A
1.5
V
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
230
pF
Gain bandwidth product
fT
VCE =
10 V, IC = 1.0 A
80
MHz
Turn-on time
ton
0.3
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
6.0 A, RL = 8.3 ,
IB1 =
IB2 = 0.3 A, VCC 50 V
Refer to the test circuit.
0.3
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1227MQ | 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1229 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SD1237L-R | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SB921L-Q | 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1238-Q | 12 A, 80 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1224(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SD1224_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Pulse Motor Drive, Hammer Drive Applications |
| 2SD1225 | 制造商:ROHM 制造商全称:Rohm 功能描述:2SD1225 |
| 2SD1225M | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1226 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。