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参数资料
| 型号： | 2SD1381FQ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-126FP, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 89K |
| 代理商： | 2SD1381FQ |
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5V
Collector current
IC
1
A (DC)
2
A (Pulse)
1
Junction temperature
Tj
150
C
Storage temperature
Tstg
55+150
C
Collector power
dissipation
PC
0.5
2
2
1
3
10
0.3
1
1.2
W
W (Tc=25C)
W
W (Tc=25C)
1 Pw=20ms, duty=1 / 2
2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
3 When mounted on a 40×40×0.7mm ceramic board.
5
2SD1898
2SD1733
2SD1768S
2SD1863
2SD1381F
!Electrical characteristics
(Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
100
80
5
180
2SD1863
2SD1733, 2SD1898
2SD1768S
2SD1381F
0.15
100
20
1
0.4
390
VIC
=50
A
IC
=1mA
IE
=50
A
VCB
=80V
VEB
=4V
IC/IB
=500mA/20mA
VCE
=10V, IE=
50mA, f=100MHz
VCE
=3V, IC=0.5A
VCB
=10V, IE=0A, f=1MHz
V
A
V
82
390
120
390
82
270
MHz
pF
Typ.
Max.
Unit
Conditions
* Measured using pulse current
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1381FP | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1381F/Q | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD1409A | 6 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SD1411A-Y | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1411A-O | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1383K | 制造商:JVC Worldwide 功能描述:SUB ONLY SI.TRANSISTOR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1383KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1383KT146B | 功能描述:达林顿晶体管 NPN 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SD1385 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1387 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 20V 2A .7W ECB |
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