- 您现在的位置：买卖IC网 > PDF目录30579 > 2SD1381FQ 1 A, 80 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD1381FQ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-126FP, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 89K |
| 代理商： | 2SD1381FQ |
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Packaging specifications and hFE
Package
Taping
Code
2SD1898
Type
T100
1000
hFE
TL
2500
TP
5000
2000
Bulk
2SD1733
2SD1768S
2SD1863
2SD1381F
PQR
QR
R
TV2
2500
Basic ordering unit (pieces)
PQ
hFE values are classified as follows :
Item
hFE
R
180~390
Q
120~270
P
82~180
!Electrical characteristic curves
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
10
1
Ta=25C
VCE=5V
24
08
10
6
COLLECTOR
CURRENT
:
I
C
(
A)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.2 Grounded emitter output
characteristics
1.0
0
0.8
0.6
0.4
0.2
6mA
5mA
4mA
3mA
2mA
1mA
IB=0mA
Ta=25C
0
100
1000
100
0
10
1000
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs.
collector current
Ta=25C
VCE=3V
1V
0.01
0.1
1.0
2.0
0.2
0.02
0.05
0.5
100
0
10
1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(
V)
COLLECTOR CURRENT : IC (
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
IC/IB=20/1
Ta=25C
10/1
1
2
5
10
20
50 100 200 500 1000
TRANSITION
FREQUENCY
:
f
T(MHz)
EMITTER CURRENT :
IE (mA)
Fig.5 Gain bandwidth product vs.
emitter current
500
200
100
50
20
10
5
2
Ta=25C
VCE=5V
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR
OUTPUT
CAPACITANCE
:Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (
V)
EMITTER TO BASE VOLTAGE
: VEB (
V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
10
1
Ta=25C
f=1MHz
IE=0A
Ic=0A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1381FP | 1 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1381F/Q | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126FP |
| 2SD1409A | 6 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SD1411A-Y | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 2SD1411A-O | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1383K | 制造商:JVC Worldwide 功能描述:SUB ONLY SI.TRANSISTOR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1383KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1383KT146B | 功能描述:达林顿晶体管 NPN 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SD1385 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1387 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 20V 2A .7W ECB |
发布紧急采购，3分钟左右您将得到回复。