- 您现在的位置：买卖IC网 > PDF目录33427 > 2SD1411A 7 A, 80 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD1411A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | 2SD1411A |
2SD1411A
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1411A
High-Current Switching Applications
Power Amplifier Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A
Complementary to 2SB1018A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
5
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
―
V
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
70
―
240
DC current gain
hFE (2)
VCE = 1 V, IC = 4 A
30
―
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.4 A
―
0.25
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 4 A, IB = 0.4 A
―
0.9
1.4
V
Transition frequency
fT
VCE = 4 V, IC = 1 A
―
10
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
200
―
pF
Turn-on time
ton
―
0.4
―
Storage time
tstg
―
2.5
―
Switching time
Fall time
tf
IB1 = IB2 = 0.3 A, duty cycle ≤ 1%
―
0.5
―
s
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
I B1
20 s
VCC = 30 V
Output
10
IB2
IB1
Input
I B2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1412A | 7 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD1418-DC | SMALL SIGNAL TRANSISTOR |
| 2SD1418-DB | SMALL SIGNAL TRANSISTOR |
| 2SD1418DA | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1418DC | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1411A-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS |
| 2SD1411A-Y(F) | 制造商:Toshiba 功能描述:NPN 80V 7A 120 to 240 TO220NIS Bulk |
| 2SD1413 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 60V 3A 25W BCE |
| 2SD1414 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 10V 4A 30W BCE |
| 2SD1415A(F) | 制造商:Toshiba 功能描述:NPN 100V 7A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 100V 7A 3-Pin(3+Tab) TO-220NIS |
发布紧急采购，3分钟左右您将得到回复。