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参数资料
| 型号： | 2SD1411A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 146K |
| 代理商： | 2SD1411A |
2SD1411A
2004-07-07
4
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
VBE (sat) – IC
Ba
se-
emi
tte
rsa
tu
rati
on
v
oltage
V
BE
(
sa
t)
(
V
)
0.1
1
30
100
0.3
0.5
1
10
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
5
3
100 ms*
10
20
0.1
0.3
1
3
5
10
Common emitter
IC/IB = 10
0.5
1
3
10
0.03
0.3
0.1
Tc = 55°C
25
100
8
0
6
4
2
0.8
1.2
1.6
2.0
0.4
Common emitter
VCE = 1 V
25
55
Tc = 100°C
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PDF描述 |
|---|---|
| 2SD1412A | 7 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD1418-DC | SMALL SIGNAL TRANSISTOR |
| 2SD1418-DB | SMALL SIGNAL TRANSISTOR |
| 2SD1418DA | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1418DC | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1411A-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS |
| 2SD1411A-Y(F) | 制造商:Toshiba 功能描述:NPN 80V 7A 120 to 240 TO220NIS Bulk |
| 2SD1413 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 60V 3A 25W BCE |
| 2SD1414 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR2-10L1A 10V 4A 30W BCE |
| 2SD1415A(F) | 制造商:Toshiba 功能描述:NPN 100V 7A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 100V 7A 3-Pin(3+Tab) TO-220NIS |
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