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参数资料
| 型号： | 2SD1490D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92(1), 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 139K |
| 代理商： | 2SD1490D |
Data Sheet D19080EJ1V0DS
3
2SK4178
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
P
ercentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
TC - Case Temperature -
°C
P
T-
Total
Power
Dissipati
on
-
W
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
I
D
-
Drain
Cur
rent
-
A
0.1
1
10
100
1000
0.1
1
10
100
ID(pulse)
ID(DC)
1i0 m
i
s
TC = 25
°C
Single pulse
1i m
i
s
Po
we
r D
iss
ipa
tio
n L
im
ite
d
RD
S(on)
Limi
ted
(V
GS
= 1
i 0
V)
PW
= 1
i
00
μs
VDS - Drain to Source Voltage - V
I
D
-
Drain
Cur
rent
-
A
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
TC - Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t)
-
Transient
Therm
al
Resistance
-
°C/W
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/W
Single pulse
Rth(ch-C) = 3.8
°C/W
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1525 | 30 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD1527 | 0.5 A, 1000 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1538Q | 4 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 2SD1581 | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1581 | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1491-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1492 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-651500V 1.5A 50W BCE |
| 2SD1493 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-651500V 2.5A 50W BCE |
| 2SD1494 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR SC 1500V 3A 50W BCE |
| 2SD1495 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3P1500V 4A 50W BCE |
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