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参数资料
| 型号： | 2SD1525 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-21F1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 175K |
| 代理商： | 2SD1525 |
2SD1525
2009-08-06
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1525
High Current Switching Applications
High collector current: IC = 30 A
High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A)
Monolithic construction with built-in base-emitter shunt resistor.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
30
A
Base current
IB
5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
BASE
EMITTER
≈ 2 k
≈ 100
COLLECTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1525(F) | 功能描述:两极晶体管 - BJT NPN VCEO 100V VCE 5V Ic 30A hFE 1000 min RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1526 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1527(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1531 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS.TRANS. TO-126B 50V 2A 1.2W ECB |
| 2SD1535 | 功能描述:TRANS NPN 400VCEO 7A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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