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参数资料
| 型号： | 2SD1898T100/P |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 173K |
| 代理商： | 2SD1898T100/P |
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2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
Data Sheet
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5V
Collector current
IC
1
A (DC)
2
A (Pulse)
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Collector power
dissipation
PC
0.5
2
1
3
10
0.3
1
W
W (Tc=25
°C)
W
1 Pw=20ms, duty=1 / 2
2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
3 When mounted on a 40×40×0.7mm ceramic board.
2SD1898
2SD1733
2SD1768S
2SD1863
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
120
80
5
120
2SD1863
2SD1733, 2SD1898
2SD1768S
0.15
100
20
1
0.4
390
VIC=50
A
IC
=1mA
IE
=50
A
VCB
=100V
VEB
=4V
IC/IB
=500mA/20mA
VCE
=10V, IE=
50mA, f=100MHz
VCE
=3V, IC=0.5A
VCB
=10V, IE=0A, f=1MHz
V
A
V
82
390
120
390
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current
Packaging specifications and hFE
Package
Taping
Code
2SD1898
Type
T100
1000
hFE
TL
2500
TP
5000
2SD1733
2SD1768S
2SD1863
PQR
QR
TV2
2500
Basic ordering unit (pieces)
hFE values are classified as follows :
Item
hFE
R
180 to 390
Q
120 to 270
P
82 to 180
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相关代理商/技术参数 |
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|---|---|
| 2SD1898T100Q | 功能描述:两极晶体管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1898T100R | 功能描述:两极晶体管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1899-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 3A 2-Pin(2+Tab) TO-252 |
| 2SD1899-AZ-L | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SD1899-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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