参数资料
型号: 2SD1898T100/P
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: MPT3, SC-62, 3 PIN
文件页数: 3/4页
文件大小: 173K
代理商: 2SD1898T100/P
3/3
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
Data Sheet
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Electrical characteristic curves
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
10
1
Ta=25
°C
VCE=5V
24
08
10
6
COLLECTOR
CURRENT
:
I
C
(
A)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.2 Grounded emitter output
characteristics
1.0
0
0.8
0.6
0.4
0.2
6mA
5mA
4mA
3mA
2mA
1mA
IB=0mA
Ta=25
°C
0
100
1000
100
0
10
1000
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs.
collector current
Ta=25
°C
VCE=3V
1V
0.01
0.1
1.0
2.0
0.2
0.02
0.05
0.5
100
0
10
1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(
V
)
COLLECTOR CURRENT : IC (
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
IC/IB=20/1
Ta=25
°C
10/1
1
2
5
10
20
50 100 200 500 1000
TRANSITION
FREQUENCY
:
f
T(MHz)
EMITTER CURRENT :
IE (mA)
Fig.5 Gain bandwidth product vs.
emitter current
500
200
100
50
20
10
5
2
Ta=25
°C
VCE=5V
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR
OUTPUT
CAPACITANCE
:Cob
(
pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (
V)
EMITTER TO BASE VOLTAGE
: VEB (
V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
10
1
Ta=25
°C
f=1MHz
IE=0A
Ic=0A
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
COLLECTOR
CURRENT
:
I
C
(A)
0.1 0.2 0.5 1 2
5 10 20 50100
500
200
1000
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Ic Max (Pulse)
Ta=25
°C
Single
non-repetitive
pulse
Pw=10m
S
Pw=100mS
DC
Fig.7 Safe operating area
(2SD1863)
Ic Max (Pulse)
Ta=25
°C
Single
non-repetitive
pulse
Pw=10m
S
Pw=100mS
DC
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
COLLECTOR
CURRENT
:
I
C
(
A)
0.1 0.2 0.5 1
2
5 10 20 50100
500
200
1000
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Fig.8 Safe operating area
(2SD1898)
相关PDF资料
PDF描述
2SD1733TL/P 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1899-ZL-E2 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1899-Z-E1 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1899-ZM-E1 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1899-ZL 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SD1898T100Q 功能描述:两极晶体管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SD1898T100R 功能描述:两极晶体管 - BJT NPN 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SD1899-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 3A 2-Pin(2+Tab) TO-252
2SD1899-AZ-L 制造商:Renesas Electronics 功能描述:Bulk
2SD1899-K-AZ 制造商:Renesas Electronics Corporation 功能描述: