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参数资料
| 型号： | 2SD1947A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | 2-10R1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 146K |
| 代理商： | 2SD1947A |
2SD1947A
2004-07-26
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
10
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
―
V
hFE (1)
VCE = 1 V, IC = 1 A
500
―
1500
DC current gain
hFE (2)
VCE = 1 V, IC = 5 A
150
―
Collector-emitter saturation voltage
VCE (sat)
IC = 5 A, IB = 0.05 A
―
0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = 5 A, IB = 0.05 A
―
1.2
V
Collector-emitter forward voltage
VECF
IE = 5 A, IB = 0
―
2.0
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
70
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
160
―
pF
Turn-on time
ton
―
0.5
―
Storage time
tstg
―
6.0
―
Switching time
Fall time
tf
IB1 = IB2 = 0.05 A, duty cycle ≤ 1%
―
1.0
―
s
Marking
I B1
20 s
VCC = 30 V
Output
6
IB2
IB1
Input
I B2
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
D1947A
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1947A(F) | 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, NPN, Power, D |
| 2SD1949Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1949T106 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1949T106Q | 功能描述:两极晶体管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1949T106R | 功能描述:两极晶体管 - BJT NPN 50V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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