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参数资料
| 型号： | 2SD1998 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PCP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 77K |
| 代理商： | 2SD1998 |
2SB1324 / 2SD1998
No.3130-1/4
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between collector and emitter.
Large current capacity.
Small-sized package making it easy to provide high-density, small-sized hybrid ICs.
Specifications ( ) : 2SB1324
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)40
V
Collector-to-Emitter Voltage
VCEO
(--)30
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)3
A
Collector Current (Pulse)
ICP
(--)5
A
Collector Dissipation
PC
Mounted on a ceramic board (250mm2
0.8mm)
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)30V, IE=0A
(--)1.0
μA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)0.5A
75
hFE2VCE=(--)2V, IC=(--)2A
50
Marking 2SB1324 : BL
Continued on next page.
2SD1998 : DM
www.semiconductor-sanyo.com/network
Ordering number : EN3130A
31710EA TK IM / 41504TN (PC)/O1598HA (KT)/6089MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB1324 / 2SD1998
PNP / NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD200 | 制造商:Panasonic Industrial Company 功能描述:XISTOR |
| 2SD2000 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 80V 4A 35W BCE |
| 2SD20000P | 功能描述:TRANS NPN LF 60VCEO 4A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2000O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR |
| 2SD2000P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR |
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