- 您现在的位置：买卖IC网 > PDF目录30588 > 2SD2012 3 A, 60 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2012 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 126K |
| 代理商： | 2SD2012 |
2SD2012
2009-12-01
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
3
A
Base current
IB
0.5
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2030-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030 | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030B | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030C | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030 | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2012(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SD2012(F,M) | 功能描述:两极晶体管 - BJT NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2012,F(J | 制造商:Toshiba 功能描述:The same specification as 2SD2012(F) Bulk 制造商:Toshiba 功能描述:0 |
| 2SD2012_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:NPN SILICON POWER TRANSISTOR |
| 2SD2012_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
发布紧急采购，3分钟左右您将得到回复。