- 您现在的位置：买卖IC网 > PDF目录30588 > 2SD2012 3 A, 60 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2012 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 126K |
| 代理商： | 2SD2012 |
2SD2012
2009-12-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
―
100
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
100
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
―
V
hFE (1)
VCE = 5 V, IC = 0.5 A
100
―
320
DC current gain
hFE (2)
VCE = 5 V, IC = 2 A
20
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.2 A
―
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
―
0.75
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
―
3
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
35
―
pF
Marking
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 2
D2012
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2030-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030 | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030B | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030C | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030 | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2012(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SD2012(F,M) | 功能描述:两极晶体管 - BJT NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2012,F(J | 制造商:Toshiba 功能描述:The same specification as 2SD2012(F) Bulk 制造商:Toshiba 功能描述:0 |
| 2SD2012_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:NPN SILICON POWER TRANSISTOR |
| 2SD2012_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
发布紧急采购，3分钟左右您将得到回复。