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参数资料
| 型号： | 2SD2012 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 126K |
| 代理商： | 2SD2012 |
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
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Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2030-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030 | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030B | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030C | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030 | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2012(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SD2012(F,M) | 功能描述:两极晶体管 - BJT NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2012,F(J | 制造商:Toshiba 功能描述:The same specification as 2SD2012(F) Bulk 制造商:Toshiba 功能描述:0 |
| 2SD2012_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:NPN SILICON POWER TRANSISTOR |
| 2SD2012_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
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