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参数资料
| 型号： | 2SD2110 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 34K |
| 代理商： | 2SD2110 |
2SD2110
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
80
V
Collector to emitter voltage
V
CEO
80
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
4A
Collector peak current
I
C(peak)
8A
Collector power dissipation
P
C
2W
P
C*
1
25
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
I
D*
1
4A
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
80
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
——10
A
V
CB = 65 V, IE = 0
I
CEO
——10
V
CE = 65 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 2 A*
1
Collector to emitter saturation
V
CE(sat)1
—
1.5
V
I
C = 2 A, IB = 4 mA*
1
voltage
V
CE(sat)2
—
3.0
I
C = 4 A, IB = 40 mA*
1
Base to emitter saturation
V
BE(sat)1
—
2.0
V
I
C = 2 A, IB = 4 mA*
1
voltage
V
BE(sat)2
—
3.5
I
C = 4 A, IB = 40 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 4 A*
1
Note:
1. Pulse test.
See switching characteristic curve of 2SD1602.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2111 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD2112 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD2113 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD2114 | 制造商:HTSEMI 制造商全称:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN) |
| 2SD2114_11 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
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