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参数资料
| 型号： | 2SD2130 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封装： | 2-8H1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 183K |
| 代理商： | 2SD2130 |
2SD2130
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2130
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
Zener diode included between collector and base
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60 ± 10
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
6
V
DC
IC
±4
Collector current
Pulse
ICP
±6
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
BASE
EMITTER
≈ 5 k
≈ 200
COLLECTOR
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PDF描述 |
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| 2SD2133S | 1 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2133R | 1 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2144STP | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2177S | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2179R | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2130(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2131 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (Darlington) |
| 2SD2131(Q) | 制造商:Toshiba 功能描述:NPN 60V 5A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 70V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SD2131_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (Darlington) |
| 2SD2132 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9225V .5A .625W ECB 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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