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参数资料
| 型号： | 2SD2130 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封装： | 2-8H1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 183K |
| 代理商： | 2SD2130 |
2SD2130
2004-07-26
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.6
―
2.0
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 10 mA, IE = 0
50
60
70
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 10 mA, IC = 0
6
―
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
―
15000
DC current gain
hFE (2)
VCE = 2 V, IC = 3 A
1000
―
Collector-emitter saturation voltage
VCE (sat)
IC = 3 A, IB = 10 mA
―
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 3 A, IB = 10 mA
―
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
60
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
30
―
pF
Turn-on time
ton
―
0.2
―
Storage time
tstg
―
3.0
―
Switching time
Fall time
tf
IB1 = IB2 = 10 mA, duty cycle ≤ 1%
―
0.5
―
s
Marking
I B1
20 s
Input
I B2
VCC = 30 V
IB1
IB2
Output
10
D2130
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2130(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2131 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (Darlington) |
| 2SD2131(Q) | 制造商:Toshiba 功能描述:NPN 60V 5A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 70V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SD2131_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (Darlington) |
| 2SD2132 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9225V .5A .625W ECB 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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