参数资料
型号: 2SD2130
元件分类: 功率晶体管
英文描述: 4 A, 50 V, NPN, Si, POWER TRANSISTOR
封装: 2-8H1A, 3 PIN
文件页数: 3/5页
文件大小: 183K
代理商: 2SD2130
2SD2130
2004-07-26
3
Collector-emitter voltage VCE (V)
IC – VCE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
Collector current IC (A)
VBE (sat) – IC
Ba
se-
emi
tte
rsa
tu
rati
on
v
oltag
e
V
BE
(
sa
t)
(
V
)
hFE – IC
DC
cur
re
nt
gain
h
FE
Collector current IC (A)
Base current IB (mA)
VCE – IB
Col
lect
or
-e
m
itte
rv
olt
a
ge
V
CE
(V
)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
0
IB = 150 A
160
0
Common emitter
Tc = 25°C
170
200
300
400
500
1
2
3
4
5
6
7
6
1
2
3
4
5
0
Common emitter
VCE = 2 V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
6
1
2
3
4
5
Tc = 100°C
25
55
20000
0.05
300
10
Tc = 100°C
25
55
Common emitter
VCE = 2 V
0.1
0.3
0.5
1
3
5
500
1000
3000
5000
10000
0.1
10
Tc = 55°C
100
25
Common emitter
IC/IB = 500
10
0.3
0.5
1
3
5
0.5
1
3
5
0.1
2.4
1
Common emitter
Tc = 25°C
500
0
0.3 0.5 1
3
10
100
300
0.4
0.8
1.2
1.6
2.0
5
30 50
IC = 6 A
2
3
4
5
0.1
0.3
0.1
10
Tc = 55°C
100
25
Common emitter
IC/IB = 500
10
0.3
0.5
1
3
5
0.5
1
3
5
相关PDF资料
PDF描述
2SD2133S 1 A, 50 V, NPN, Si, POWER TRANSISTOR
2SD2133R 1 A, 50 V, NPN, Si, POWER TRANSISTOR
2SD2144STP 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2177S 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2179R 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SD2130(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SD2131 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (Darlington)
2SD2131(Q) 制造商:Toshiba 功能描述:NPN 60V 5A 2000 to 15000 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans Darlington NPN 70V 5A 3-Pin(3+Tab) TO-220NIS
2SD2131_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type (Darlington)
2SD2132 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9225V .5A .625W ECB 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR