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| 型号： | 2SD2118RTL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CPT3, SC-63, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 178K |
| 代理商： | 2SD2118RTL |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.11 - Rev.C
Data Sheet
2SD2118
Packaging specifications and hFE
Package
Taping
Code
Type
hFE
TL
2500
2SD2118
QR
Basic ordering unit (pieces)
hFE values are classified as follows :
Item
hFE
R
180 to 390
Q
120 to 270
Electrical characteristic curves
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
VCE
=2V
25
°C
25°C
Ta=100
°C
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
Ta
=25°C
5mA
10mA
15mA
20mA
25mA
30mA
35mA
40mA
IB
=0mA
45mA
50mA
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Grounded emitter output
characteristics
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m 0.010.02 0.050.1 0.2 0.5 1
2
5 10
Ta
=25°C
2V
1V
VCE
=5V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.3 DC current gain vs.
collector current (
Ι )
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
5 10
VCE
=1V
25
°C
25°C
Ta
=100°C
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.4 DC current gain vs.
collector current (
ΙΙ )
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m0.010.02 0.050.10.2 0.5 1
2
5 10
VCE
=2V
25
°C
25°C
Ta
=100°C
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.5 DC current gain vs.
collector current (
ΙΙΙ )
5m0.010.02 0.05
0.2 0.5 1
2m
2
1
0.5
0.2
0.1
0.05
0.02
0.01
25 10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(
V)
COLLECTOR CURRENT : IC
(A)
Fig.6 Collector-emitter
saturation voltage vs.
collector current (
Ι )
Ta
=25°C
0.1
IC/IB
=50
30
10
40
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1
2
5 10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(
V)
COLLECTOR CURRENT : IC
(A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
ΙΙ )
lC/lB
=10
25
°C
25°C
Ta
=100°C
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2m 5m0.010.02 0.05 0.1 0.2 0.5 1
2
5 10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(A)
Fig.8 Collector-emitter
saturation voltage vs.
collector current (
ΙΙΙ )
lC/lB
=30
Ta
=100°C
25
°C
25°C
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2m 5m0.010.02 0.05 0.1 0.2
0.5 1 2
5
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(A)
Fig.9 Collector-emitter
saturation voltage vs.
collector current (IV)
lC/lB
=40
25
°C
25°C
Ta
=100°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2118S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-252VAR |
| 2SD2118TLQ | 功能描述:两极晶体管 - BJT NPN 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2118TLR | 功能描述:两极晶体管 - BJT NPN 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2118-TLR | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR SMD PNP 80V 1A |
| 2SD212 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 90V 1A 100W BEC |
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