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参数资料
| 型号： | 2SD2150T100 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 50K |
| 代理商： | 2SD2150T100 |
2SD2150
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25 C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
20
6
120
0.2
290
25
0.1
560
0.5
VIC
=50
μA
IC
=1mA
IE
=50
μA
VCB
=30V
VEB
=5V
VCE
=2V, IC=0.1A
IC/IB
=2A/0.1A
VCE
=2V, IE= 0.5A, f=100MHz
VCE
=10V, IE=0A, f=1MHz
V
μA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Packaging specifications and hFE
Package
Code
T100
1000
Taping
Basic ordering
unit (pieces)
RS
hFE
2SD2150
Type
hFE values are classified as follows :
Item
hFE
R
180 to 390
S
270 to 560
Electrical characteristic curves
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1
Grounded emitter propagation
characteristics
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE
=2V
25
°C
40°C
Ta
=100°C
0
0.4
0.8
1.2
1.6
2
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2
Grounded emitter output
characteristics ( )
8mA
6mA
4mA
2mA
20mA
18mA
16mA
14mA
12mA
10mA
Ta
=25°C
IB
=0A
0
1
2
3
4
5
012345
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3
Grounded emitter output
characteristics ( )
Ta
=25°C
IB
=0A
35mA
30mA
25mA
20mA
15mA
10mA
5mA
40mA
45mA
50mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2150T100R | 功能描述:两极晶体管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2150T100S | 功能描述:两极晶体管 - BJT NPN 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2151 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type(For power switching) |
| 2SD2151P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | SOT-186 |
| 2SD2151Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | SOT-186 |
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