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参数资料
| 型号： | 2SD2153T100/U |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 158K |
| 代理商： | 2SD2153T100/U |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
High gain amplifier transistor (25V, 2A)
2SD2153
Features
Dimensions (Unit : mm)
1) Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
25
6
2
0.5
150
55 to +150
Unit
V
A(DC)
3
A(Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse, Pw
=10ms
1
2
2 Mounted on a 40 40 t0.7mm Ceramic substrate
+
Packaging specifications and hFE
Type
2SD2153
MPT3
UVW
T100
DN
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
30
25
6
820
110
22
0.5
1800
V
μA
MHz
pF
IC
=50μA
IC
=1mA
IE
=50μA
VCB
=20V
VEB
=5V
0.12
0.5
V
IC/IB
=1A/20mA
VCE/IC
=6V/0.5A
VCE
=10V,IE =10mA ,f= 100MHz
VCB
=10V,IE =0A ,f =1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2153T100V | 功能描述:两极晶体管 - BJT NPN 25V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2153T100W | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 25V 2A 4PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2153U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62 |
| 2SD2153V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62 |
| 2SD2153W | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62 |
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