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参数资料
| 型号： | 2SD2153T100/U |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 158K |
| 代理商： | 2SD2153T100/U |
2/2
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
Data Sheet
2SD2153
Electrical characteristics curves
0
Fig.1 Ground emitter output
characteristics
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(A)
1
2
10mA
7mA
6mA
5mA
9mA
8mA
3mA
2mA
1B=1mA
4mA
Ta=100 C
25 C
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
1
1.5
500m
0
Fig.2 Ground emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR
CURRENT
:
I
C
(A)
1m
2m
5m
1
2
5
10
10m
20m
50m
100m
200m
500m
Fig.3 DC current gain
VCE=6V
Ta=100 C
25 C
40 C
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
1m
50
100
200
500
1k
2k
5k
10k
10m
100m
1
10
IC/IB=50
40
30
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
25
COLLECTOR CURRENT : IC (
A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
IC/IB=10
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
25
1m
COLLECTOR CURRENT : IC (
A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta=100 C
25 C
TRANSITION
FREQUENCY
:
f
T
(MHz)
2
5
10 20
50 100 200 500 1000
1
2
5
10
20
50
100
200
500
10000
1
EMITTER CURRENT : IE (m
A)
Fig.6 Gain bandwith product
vs. emitter current
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
VCE=6V
Ta=25 C
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob(p
F)
10
0.2
20
0.5
50
1
100
2
200
5
500
10
1000
20
50 100
0.1
COLLECTOR TO BASE VOLTAGE : VCB (
V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Ta=25
°C
f=1MHz
Ic=0A
EMITTER
INPUT
CAPACITANCE
:
Cib(pF)
10
0.2
20
0.5
50
1
100
2
200
5
500
10
1000
0.1
EMITTER TO BASE VOLTAGE : VEB (
V)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Ta=25
°C
f=1MHz
Ic=0A
PW=100ms
COLLECTOR
CURRENT
:
Ic
(A)
1
10
100
0.1
0.001
0.01
0.1
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.9 Safe operating area
Ta=25
°C
Single non repetitive pulse
Ic max (Pulse)
PW=10ms
DC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2153T100V | 功能描述:两极晶体管 - BJT NPN 25V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2153T100W | 功能描述:两极晶体管 - BJT TRANS GP BJT NPN 25V 2A 4PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2153U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62 |
| 2SD2153V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62 |
| 2SD2153W | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SC-62 |
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