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参数资料
| 型号： | 2SD2216JR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSMINI3-F1, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 204K |
| 代理商： | 2SD2216JR |
2SD2216J
2
SJC00249DED
This product complies with the RoHS Directive (EU 2002/95/EC).
IC VBE
IC IB
VCE(sat) IC
PC Ta
IC VCE
IB VBE
hFE IC
Cob VCB
0
160
40
120
80
0
200
160
120
80
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
012
10
8
26
4
0
90
75
60
45
30
15
Ta
= 25°C
IB
= 160 A
40
A
80
A
20
A
60
A
140
A
120
A
100
A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
1.0
0.8
0.2
0.6
0.4
0
1 200
1 000
800
600
400
200
VCE
= 10 V
Ta
= 25°C
Base-emitter voltage V
BE (V)
Base
current
I
B
(
A
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0
480
400
320
80
240
160
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 25°C
Base current I
B (A)
Collector
current
I
C
(mA
)
1
10
100
1 000
0.001
0.01
0.1
1
10
IC / IB
= 10
25
°C
25°C
Ta
= 75°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
1
10
100
1 000
0
480
400
320
240
160
80
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
1
10
100
0
6
5
4
3
2
1
f
= 1 MHz
IE
= 0
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2216L | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For General Amplification |
| 2SD2217 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2217AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2218 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General High-Current Switching Applications |
| 2SD2218Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
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