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参数资料
| 型号： | 2SD2389O |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封装： | MT-100, TO-3P, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 28K |
| 代理商： | 2SD2389O |
149
Darlington
2SD2389
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
θj-a–t Characteristics
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
Safe Operating Area (Single Pulse)
f T– I E Characteristics (Typical)
0
2
4
6
8
24
6
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
10mA
2.5mA
2.0mA
1.8mA
1.5mA
1.3mA
1.0mA
0.8mA
0.5mA
I B=0.3mA
02
0.5
1
5
8
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=4V)
1000
5000
10000
40000
Typ
0
8
6
4
2
02
1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
80
60
40
20
3.5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
10
50
5
3
100
200
150
0.05
0.03
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=4A
I C=6A
I C=8A
(V CE=4V)
0.2
0.5
5
8
1
Collector Current I C(A)
DC
Current
Gain
h
FE
1000
500
5000
10000
50000
125C
25C
–30C
–0.02
–0.1
–1
–8
0
20
40
120
100
80
60
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=12V)
Emitter Current I E(A)
Typ
0.2
0.5
4
1
11 0
5 0
5
100
500 1000 2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
160
150
5
8
1
80(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Ratings
100max
150min
5000min
2.5max
3.0max
80typ
85typ
Unit
A
V
MHz
pF
Conditions
VCB=160V
VEB=5V
IC=30mA
VCE=4V, IC=6A
IC=6A, IB=6mA
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
60
RL
(
)
10
IC
(A)
6
VBB2
(V)
–5
IB2
(mA)
–6
ton
(
s)
0.6typ
tstg
(
s)
10.0typ
tf
(
s)
0.9typ
IB1
(mA)
6
VBB1
(V)
10
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B
C
E
(70
)
Equivalent circuit
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2390 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 150V 10A 3-Pin(3+Tab) TO-3P 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 150V 10A 3-Pin(3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN AUDIO/GP MT-100 TO-3P 制造商:Allegro MicroSystems 功能描述:DARLINGTON TRANSISTOR TO-3P 制造商:Allegro MicroSystems 功能描述:DARLINGTON TRANSISTOR, TO-3P 制造商:Allegro MicroSystems 功能描述:TRANSISTOR,BJT,DARLINGTON,NPN,150V V(BR)CEO,10A I(C),TO-247VAR |
| 2SD2390 | 制造商:Allegro MicroSystems 功能描述:TRANSISTOR DARLINGTON TO-3P |
| 2SD2391T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2391T100Q | 功能描述:两极晶体管 - BJT NPN 60V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2395E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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