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参数资料
| 型号： | 2SD2537T100W |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 64K |
| 代理商： | 2SD2537T100W |
2SD2537
Transistors
Rev.B
1/3
Medium Power Transistor (25V, 1.2A)
2SD2537
Features
1) High DC current gain.
2) High emitter-base voltage. (VEBO=12V)
3) Low saturation voltage.
(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
25
12
1.2
2
150
55 to +150
Unit
V
A (DC)
A (Pulse)
W
°C
1 Single pulse Pw
=100ms
2 When mounted on a 40×40×0.7mm ceramic board.
Storage temperature
Junction temperature
Collector current
Emitter-base voltage
Collector-emitter voltage
Collector-base voltage
Collector power dissipation
1
2
0.5
W
External dimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
2SD2537
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
Packaging specifications and hFE
Type
2SD2537
MPT3
VW
DV
T100
1000
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
30
25
12
200
20
0.3
V
A
V
820
1800
MHz
pF
IC
=10A
IC
=1mA
IE
=10A
VCB
=30V
VEB
=12V
IC/IB
=500mA/10mA
VCE/IC
=5V/0.5A
hFE
VCE
=10V, IE=50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
VBE(sat)
1.2
V
IC/IB
=0.5A/10mA
Base-emitter saturation voltage
Emitter cutoff current
Collector cutoff current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current transfer ratio
Measured using pulse current.
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