参数资料
型号: 2SD2457G-Q
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, MINIP3-F2, 3 PIN
文件页数: 1/4页
文件大小: 170K
代理商: 2SD2457G-Q
Transistors
1
Publication date: October 2007
SJD00345AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2457G
Silicon NPN epitaxial planar type
For low-frequency output amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low collector power dissipation P
C
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
40
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 1 mA, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 040
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IE = 010
A
Forward current transfer ratio *
1, 2
hFE
VCE = 5 V, IC = 1 A
80
220
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1.5 A, I
B
= 0.15 A
1.0
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 2 A, IB = 0.2 A
1.5
V
Transition frequency *
1
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
45
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Rank
Q
R
hFE
80 to 160
120 to 220
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: 1Y
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2SD2457G 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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