- 您现在的位置：买卖IC网 > PDF目录30592 > 2SD2457GR (PANASONIC CORP) 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2457GR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 201K |
| 代理商： | 2SD2457GR |
Transistors
1
Publication date: October 2007
SJD00345AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2457G
Silicon NPN epitaxial planar type
For low-frequency output amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low collector power dissipation P
C
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
40
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1.5
A
Peak collector current
ICP
3A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 1 mA, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 040
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IE = 010
A
Forward current transfer ratio *
1, 2
hFE
VCE = 5 V, IC = 1 A
80
220
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 1.5 A, I
B
= 0.15 A
1.0
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 2 A, IB = 0.2 A
1.5
V
Transition frequency *
1
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
45
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Rank
Q
R
hFE
80 to 160
120 to 220
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: 1Y
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2457Q | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2461 | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2462 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2532 | SMALL SIGNAL TRANSISTOR |
| 2SD2539 | 7 A, 600 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD24590RL | 功能描述:TRANS NPN 150VCEO 1A MINI PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD24590SL | 功能描述:TRANS NPN 150VCEO 1A MINI PWR RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD246 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 1500V 4.5A 16W BEC |
| 2SD247 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 80V 5A 50W BEC |
| 2SD2470TP | 功能描述:达林顿晶体管 NPN 10V 5A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。