参数资料
型号: 2SD2544Q
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封装: MT4, 3 PIN
文件页数: 1/4页
文件大小: 190K
代理商: 2SD2544Q
Power Transistors
371
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Allowing supply with the radial taping
I Absolute Maximum Ratings T
C
= 25°C
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Unit: mm
I Electrical Characteristics T
C
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 7 V, IC = 0
10
A
Collector to emitter voltage
VCEO
IC = 10 mA, IB = 0
60
V
Forward current transfer ratio
hFE1 *
VCE = 2 V, IC = 0.8 A
500
1 000
2 000
hFE2
VCE = 2 V, IC = 2 A
60
Collector to emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 50 mA
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 50 mA
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
70
MHz
Turn-on time
ton
IC = 2 A, IB1 = 50 mA, IB2 =
50 mA,
0.5
s
Storage time
tstg
VCC = 50 V
3.6
s
Fall time
tf
1.1
s
Note) *: Rank classification
Rank
Q
P
hFE1
500 to 1 200 800 to 2 000
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7V
Peak collector current
ICP
8A
Collector current
IC
4A
Collector power
TC = 25
°CP
C
15
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder
Dip
5.0±0.1
2.5
±0.1
90
1.0±0.2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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