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参数资料
| 型号： | 2SD2582 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 46K |
| 代理商： | 2SD2582 |
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Currnet
ICB0
VCB = 30 V, IE = 0
100
nA
Emitter Cutoff Current
IEB0
VEB = 6.0 V, IC = 0
100
nA
DC Current Gain
hFE1
VCE = 2.0 V, IC = 0.5 A
150
600
DC Current Gain
hFE2
VCE = 2.0 V, IC = 3.0 A
70
Collector Saturation Voltage
VCE(sat)1
IC = 0.5 A, IB = 25 mA
0.05
0.15
V
Collector Saturation Voltage
VCE(sat)2
IC = 1.0 A, IB = 50 mA
0.09
0.25
V
Collector Saturation Voltage
VCE(sat)3
IC = 2.0 A, IB = 100 mA
0.16
0.40
V
Collector Saturation Voltage
VCE(sat)4
IC = 3.0 A, IB = 75 mA
0.27
1.0
V
Base Saturation Voltage
VBE(sat)
IC = 1.0 A, IB = 50 mA
0.83
1.50
V
Gain Bandwidth Product
fT
VCE = 10 V, IE = 50 mA
100
MHz
Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
46
pF
1996
DATA SHEET
The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SD2582
FEATURES
Low VCE(sat)
VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA)
High DC Current Gain
hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25
°C)
Collector to Base Voltage
VCB0
30 V
Collector to Emitter Voltage
VCE0
30 V
Emitter to Base Voltage
VEB0
6.0 V
Collector Current (DC)
IC(DC)
5.0 A
Collector Current (Pulse)*
IC(Pulse)
8.0 A
Base Current (DC)
IB
1.0 A
* PW
≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (TC = 25
°C)
PT
10 W
Total Power Dissipation (TA = 25
°C)
PT
1.0 W
Maximum Temperature
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to 150 °C
ELECTRICAL CHARACTERISTISC (TA = 25
°C)
Document No. D10626EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON EPITAXIAL TRANSISTORS
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
1.2
(0.047)
1.2
(0.047)
0.8
(0.031)
2.3
(0.090)
1.
2.
3.
Emitter
Collector connected to mounting plane
Base
2.3
(0.090)
+0.08
0.05
0.55
(0.021)
+0.08
0.05
12 3
12.0
MAX.
(0.472
MAX.)
3.8
±
0.2
(0.149)
φ
3.2
±
0.2
(
0.126)
2.5
±
0.2
(0.098)
13.0
MIN.
(0.512
MIN.)
2.8 MAX.
(0.110 MAX.)
3.2 ± 0.2 ( 0.126)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2584(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 100V 7A 3-Pin(3+Tab) Case DP |
| 2SD2586LBK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2588 | 制造商:Distributed By MCM 功能描述:110V 6A 50W Sanken Transistor Mt-25 |
| 2SD25980RA | 功能描述:TRANS NPN 50VCEO 500MA MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD260 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 5A 50W BEC |
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